Related papers: Extended interface states enhance valley splitting…
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical…
The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to…
In this paper, we studied the inter-valley interactions between the orbital functions associated with multi-valley of silicon (Si) quantum dots. Numerical calculations show that the inter-valley coupling between orbital functions increases…
Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable…
Bismuth oxyselenide (Bi$_2$O$_2$Se), a novel quasi-2D charge-carrying semiconductor, is hailed as one of the best emerging platforms for the next generation semiconductor devices. Recent efforts on developing diverse Bi$_2$O$_2$Se…
Modifications of the electronic bands of thin FeSe films due to oxygen vacancies in the supporting SrTiO 3 (001) substrate - and the interplay with spin-orbit coupling, magnetism, and epitaxy - are investigated by first-principles supercell…
We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $\nu=3$…
The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission…
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we…
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We investigate how hybridization (single-quasiparticle scattering) between two superconducting bands induces odd-frequency superconductivity in a multiband superconductor. An explicit derivation of the odd-frequency pairing correlation and…
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…
The superconducting s-wave state in Weyl semimetals in a strong strain-induced pseudomagnetic field is investigated in a model with local four-fermion interaction. It is found that only the inter-node pairing is possible in the lowest…
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…
Harnessing rare-earth ions in oxides for quantum networks requires integration with bright emitters in III-V semiconductors, but local disorder and interfacial noise limit their optical coherence. Here, we investigate the microscopic…
The quantum spin Hall effect has been predicted theoretically and observed experimentally in InAs/GaSb quantum wells as a result of inverted band structures, for which electron bands in InAs layers are below heavy hole bands in GaSb layers…
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we…