The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission (ARPES) study to clarify the complex topology of the hybrid interface bands. The analysis of the ARPES data, guided by a model tight-binding calculation, reveals a previously unexplored mechanism at the origin of the giant spin-orbit splitting, which relies primarily on the underlying band structure. We anticipate that other similar interfaces characterized by trimer structures could also exhibit a large effect.
@article{arxiv.1006.3566,
title = {A band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface},
author = {Emmanouil Frantzeskakis and Stephane Pons and Marco Grioni},
journal= {arXiv preprint arXiv:1006.3566},
year = {2010}
}