Related papers: Field-effect and frequency dependent transport in …
A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit.…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
We have studied the electronic structure and charge-carrier dynamics of individual single-wall carbon nanotubes (SWNTs) and nanotube ropes using optical and electron-spectroscopic techniques. The electronic structure of semiconducting SWNTs…
We performed studies of coherent electronic transport through a single walled carbon nanotube. In the calculations multiple scattering on the contacts and interference processes were taken into account. Conductance is a composition of…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
Processes that lead to the critical-current suppression and change of impedance of a superconductor under the application of an external voltage is an active area of research, especially due to various possible technological applications.…
A 1 $\mu$m long, field emitting, (5,5) single-walled, carbon nanotube (SWCNT) closed with a fullerene cap, and a similar open nanotube with hydrogen-atom termination, have been simulated using the MNDO (Modified Neglect of Diatomic Overlap)…
We have characterized the conductivity of carbon nanotubes (CNT) fibers enriched in semiconducting species as a function of temperature and pulsed laser irradiation of 266 nm wavelength. While at high temperatures the response approaches an…
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material.…
We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
The controlled covalent functionalization of semiconducting single-walled carbon nanotubes (SWCNTs) with luminescent sp$^{3}$ defects leads to additional narrow and tunable photoluminescence features in the near-infrared and even enables…
Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…