Related papers: Analytical device model for graphene bilayer field…
We study the ballistic conductivity of graphene bilayer in the presence of next-nearest neighbor hoppings between the layers. An undoped and unbiased system was found in Ref. [1] to show a nonuniversal (length-dependent) conductivity…
The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…
We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic…
Hydrodynamic electron transport arises when carrier kinetics are dominated by interelectron collisions rather than the relaxation of momentum out of the electron system. In recent years, signatures of electron hydrodynamics have been…
A striking series of experiments have observed superconductivity in Bernal-stacked bilayer graphene (BBG) when the energy bands are flattened by applying an electrical displacement field. Intriguingly, superconductivity manifests only at…
We consider in this paper the mathematical and numerical modelling of reflective boundary conditions (BC) associated to Boltzmann - Poisson systems, including diffusive reflection in addition to specularity, in the context of electron…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
Recent research on twisted bilayer graphene (TBG) uncovered that its twist-angle-dependent electronic structure leads to a host of unique properties, such as superconductivity, correlated insulating states, and magnetism. The flat bands…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…
Bernal-stacked bilayer graphene (BLG) provides an ideal basis for gate-controlled, and free of etching, electronic devices. Theoretical modeling of realistic devices is an essential part of research, however, simulations of large-scale BLG…
We derive electronic structure models for weakly interacting bilayers such as graphene-graphene and graphene-hexagonal boron nitride, based on density functional theory calculations followed by Wannier transformation of electronic states.…
We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great…
We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to…
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that…