Related papers: Polarization-engineered GaN/InGaN/GaN tunnel diode…

We carefully investigate three important effects including postgrowth activation annealing, delta ({\delta}) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction…

Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit.…

This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction…

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…

This work demonstrates the first nonpolar vertical GaN on GaN pn power diodes grown on m-plane free standing substrates by MOCVD. The SEM and HRXRD results showed the good crystal quality of the homoepitaxial nonpolar structure with low…

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both…

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge…

Nb-based circuits have broad applications in quantum-limited photon detectors, low-noise parametric amplifiers, superconducting digital logic circuits, and low-loss circuits for quantum computing. The current state-of-the-art approach for…

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high…

High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated…

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…

Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam…

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…

We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observations of the careful optimized doping for the TJs. Especially…

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…

Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…

GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs…

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…