Related papers: Spin relaxation in $n$-type (111) GaAs quantum wel…
Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $\Gamma$ and $L$ valleys included. We show that the spin relaxation…
Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by…
We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots…
The D'yakonov-Perel' mechanism of spin relaxation is connected with the spin splitting of the electron dispersion curve in crystals lacking a center of symmetry. In a two-dimensional noncentrosymmetric system, e.g. quantum well or…
We investigate the spin dynamics of electrons in quantum wells where the Rashba type of spin-orbit coupling is present in the form of random nanosize domains. We study the effect of magnetic field on the spin relaxation in these systems and…
Effect of magnetic field on electron spin relaxation in quantum wells is studied theoretically. We have shown that Larmor effect and cyclotron motion of carriers can either jointly suppress D'yakonov-Perel' spin relaxation or compensate…
We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin…
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly…
We present a theoretical study of the anisotropy of the spin relaxation and decoherence in typical quantum wells with an arbitrary magnetic field. In such systems, the orientation of the magnetic field relative to the main crystallographic…
Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged…
We report theoretical and experimental studies of ambipolar spin diffusion in a semiconductor. A circularly polarized laser pulse is used to excite spin-polarized carriers in a GaAs multiple quantum well sample at 80 K. Diffusion of…
Spin relaxation due to the D'yakonov-Perel' mechanism is intimately related with the spin splitting of the electronic states. We determine the spin relaxation rates from anisotropic spin splittings of electron subbands in n-(001)…
Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular…
We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those…
A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random…
There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We…