Related papers: Leakage Current Reduction Techniques in Poly-Si TF…

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…

In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…

The ability to perform fast and accurate rotations between the computational basis states of quantum bits is one of the most fundamental requirements for building a quantum computer. Because physical qubits generally contain more than two…

Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…

Quantum computers will require quantum error correction to reach the low error rates necessary for solving problems that surpass the capabilities of conventional computers. One of the dominant errors limiting the performance of quantum…

Spectator-induced leakage poses a fundamental challenge to scalable quantum computing, particularly as frequency collisions become unavoidable in multi-qubit processors. We introduce a leakage mitigation strategy based on dynamically…

Leakage currents through insulators received continuous attention for decades, owing to their importance for a wide range of technologies, and interest in their fundamental mechanisms. This work investigates the leakage currents through…

Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…

In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…

This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…

Power-based side-channel is a serious security threat to the System on Chip (SoC). The secret information is leaked from the power profile of the system while a cryptographic algorithm is running. The mitigation requires efforts from both…

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled…

Leakage, the occupation of any state not used in the computation, is one of the of the most devastating errors in quantum error correction. Transmons, the most common superconducting qubits, are weakly anharmonic multilevel systems, and are…

Reaching high speed, high fidelity qubit operations requires precise control over the shape of the underlying pulses. For weakly anharmonic systems, such as superconducting transmon qubits, short gates lead to leakage to states outside of…

To reduce the leakage power of inactive (dark) silicon components, modern processor systems shut-off these components' power supply using low-leakage transistors, called power-gates. Unfortunately, power-gates increase the system's…

High-fidelity quantum operations require the system dynamics to be strictly confined to the computational subspace. In practice, however, control fields inevitably couple to leakage levels, giving rise to quantum state leakage that…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

Improving the speed and fidelity of quantum logic gates is essential to reach quantum advantage with future quantum computers. However, fast logic gates lead to increased leakage errors in superconducting quantum processors based on qubits…

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…