Related papers: Resolved Sideband Emission of InAs/GaAs Quantum Do…

We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths,…

Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…

Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…

We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are…

We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is…

We present a comprehensive study of quantum dot (QD) coupling to various phononic modes in a phononic waveguide, combining multiband kp and configuration-interaction (CI) QD state simulations with finite-element waveguide mode modeling. We…

We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…

Quantum technologies that rely on photonic qubits require a precise controllability of their properties. For this purpose hybrid approaches are particularly attractive because they offer a large flexibility to address different aspects of…

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…

On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization…

We theoretically study the optical properties of an InAs/GaAs quantum dot (QD) near the area of the second-order resonance between an electron confined in the QD and two longitudinal optical phonons. We present the absorption spectra of an…

We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible…

Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter…

Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for…

Surface acoustic waves (SAWs) are a powerful tool for controlling a wide range of quantum systems, particularly quantum dots (QDs) via their oscillating strain fields. The resulting energy modulation of these single photon sources can be…

We discuss the fine-tuning of the optical properties of self-assembled quantum dots by the strain perturbation introduced by laser-induced surface defects. We show experimentally that the quantum dot transition red-shifts, independently of…

We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a…

In addition to their central role in quantum information processing, qubits have proven to be useful tools in a range of other applications such as enhanced quantum sensing and as spectrometers of quantum noise. Here we show that a…

We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within…

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…