Related papers: Planar Channeling of 855 MeV Electrons in Silicon:…
Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of…
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package…
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer…
Planar channeling of 855 MeV electrons and positrons in straight and bent tungsten (110) crystal is simulated by means of the \MBNExplorer software package. The results of simulations for a broad range of bending radii are analyzed in terms…
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection…
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly…
Channeling properties and radiation spectra are studied on the grounds of numerical simulations for the 855 MeV electrons in a periodically bent diamond crystal. The bent crystalline profiles are shown to enhance the re-channeling of the…
The results of numerical simulation of the channeling of ultra-relativistic 270 MeV electrons and positrons in a diamond crystal are presented. Using the MBN Explorer package, the trajectories of the have been determined of the particles…
Monte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular…
A surprising small dechanneling length was observed at (111) channeling of ultrarelativistic electrons in a 60 $\mu$m thick silicon single crystal with a bending radius of 0.15 m. The experiments were conducted at beam energies between 3.35…
We suggest a way to compare the experiments and simulations of electron dechanneling length in bent crystals performed at different energies and different radii. As an example, we compare the SLAC experiment at 3-14 GeV with earlier…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
If an ultrarelativistic charged particle channels inside a single crystal with periodically bent crystallographic planes, it emits hard electromagnetic radiation of the undulator type. Due to similarity of its physical principles to the…
Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending…
Monte Carlo simulation code has been developed and tested for studying the passage of charged particle beams and radiation through the crystalline matter at energies from tens of MeV up to hundreds of GeV. The developed Monte Carlo code…
We discuss the features of a crystalline undulator of the novel type based on the effect of a planar channeling of ultra-relativistic electrons in a periodically bent crystals. It is demonstrated that an electron-based undulator is feasible…
When a high-energy electrons move in a crystal along one of the crystallographic planes the phenomenon of planar channeling is possible, in which the particles move in channels formed by the continuous potential of crystalline planes. Such…
We report the observation of the steering of 855 MeV electrons by bent silicon and germanium crystals at the MAinzer MIkrotron. 15 $\mu $m long crystals, bent along (111) planes, were exploited to investigate orientational coherent effects.…
The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations…
In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the…