Related papers: Impurity effect on weak anti-localization in the t…
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…
The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide…
We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer…
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the…
Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the…
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on…
In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron…
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal…
We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states,…
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to…
Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone,…
Magnetic proximity effect of a topological insulator in contact with a ferromagnet is reported in thin film bilayers of 15 nm thick $BiSbTe_3$ on either 15 or 40 nm thick $SrRuO_3$ on (100) $SrTiO_3$ wafers. Magneto transport results of the…
The observation of quantized anomalous Hall conductance in the forced ferromagnetic state of MnBi2Te4 thin flakes has attracted much attentions. However, strong magnetic field is needed to fully polarize the magnetic moments due to the…
A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…
This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
Magnetic topological insulators (TI) provide an important material platform to explore quantum phenomena such as quantized anomalous Hall (QAH) effect and Majorana modes, etc. Their successful material realization is thus essential for our…
We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak…