Related papers: Extraordinary Magnetoresistance in Hybrid Semicond…
Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic…
Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
Extremely large magnetoresistance (XMR) was recently discovered in many non-magnetic materials, while its underlying mechanism remains poorly understood due to the complex electronic structure of these materials. Here, we report an…
Low-temperature properties of a crystal containing superconducting inclusions of two different materials have been studied. In the approximation that the size of inclusions is much smaller than the coherence length/penetration depth of the…
An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
Emergent electromagnetism in magnets originates from the strong coupling between conduction electron spins and those of noncollinear ordered moments and the consequent Berry phase. This offers possibilities to develop new functions of…
Recent experiments suggest a new paradigm towards novel colossal magnetoresistance (CMR) in a family of materials EuM$_2$X$_2$(M=Cd, In, Zn; X=P, As), distinct from the traditional avenues involving Kondo-RKKY crossovers, magnetic phase…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Electron-electron interactions are at the origin of many exotic electronic properties of materials which have emerged from recent experimental observations. The main important phenomena discovered are related with electronic magnetic…
A version of the magnetoimpurity theory of the colossal magnetoresistance materials suitable for the double exchange ferromagnetic nondegenerate semiconductors is presented. It provides an explanation of the nonmonotonic temperature…
A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe$_{2}$…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…