Related papers: Spatial Point Analysis of Quantum Dot Nucleation S…

We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution…

The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with…

In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…

A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a…

We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…

The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled.…

We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…

We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…

We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index…

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs…

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…

Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…

The equilibrium shapes of InAs quantum dots (i.e., dislocation-free, strained islands with sizes >= 10,000 atoms) grown on a GaAs (001) substrate are studied using a hybrid approach which combines density functional theory (DFT)…

The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…

The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model, based on a set of coupled reaction-diffusion…

The initial steps of MBE growth of GaAs on beta 2-reconstructed GaAs(001) are investigated by performing total energy and electronic structure calculations using density functional theory and a repeated slab model of the surface. We study…

Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…