Related papers: Strong influence of the complex bandstructure on t…
Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of…
Bi$_{2}$Se$_{3}$ is a well known 3D-topological insulators(TI) with a non-trivial Berry phase of $ \left(2n+1\right)\pi $ attributed to the topology of the band structure. The Berry phase shows non-topological deviations from $…
We study electronic transport through quantum dots weakly coupled to ferromagnetic leads with collinear magnetization directions. Tunneling contributions of first and second order in the tunnel-coupling strength are taken into account. We…
The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
Surface and ferroelectric properties of PbTiO$_3$ thin films are investigated using an interatomic potential approach with parameters computed from first-principles calculations. We show that a model developed for the bulk describes…
Strength of the the symmetry spin filtering effect (as defined by the asymptotic behavior of the tunneling magnetoresistance (TMR) at large barrier thicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetic tunnel junctions…
We calculate the tunneling magnetoresistance (TMR) of Fe$\mid$ZnSe$\mid$Fe$\mid$ZnSe$\mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the…
By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe$_3$Al/BiF$_3$/Fe$_3$Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the…
As an unconventional magnet, altermagnetism attracts great interest in condensed matter physics and applies a new research platform for the spintronics. Since the tunneling magnetoresistance (TMR) effect is an important research aspect in…
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is…
The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range…
We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…