Related papers: Development of Fast and High Precision CMOS Pixel …

Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…

Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…

Fine pixel CCD (FPCCD) is one of the candidate sensor technologies for the vertex detector used for experiments at the International Linear Collider (ILC). FPCCD vertex detector is supposed to be cooled down to -40 degree for improvement of…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of…

Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain…

The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…

Pixel Detectors, as the current technology of choice for the innermost vertex detection, have reached a stage at which large detectors have been built for the LHC experiments and a new era of developments, both for hybrid and for monolithic…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively…

The upgrade for ATLAS detector will undergo different phase towards super-LHC. The first upgrade for the Pixel detector will consist of the construction of a new pixel layer which will be installed during the first shutdown of the LHC…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve…

We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS and charge-coupled device (CCD) image data to achieve…

Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge…

COFFEE series is a HVCMOS pixel sensor using the advanced 55 nm process, currently being developed for the Upstream Pixel (UP) tracker of the LHCb Upgrade II. To ensure that COFFEE will be able to handle the particle hit rates at UP…

Future x-ray observatories will require imaging detectors with fast readout speeds that simultaneously achieve or exceed the other high performance parameters of x-ray charge-coupled devices (CCDs) used in many missions over the past three…

ISIS (In-situ Storage Imaging Sensor) is a novel CMOS sensor with multiple charge storage capability developed for the ILC vertex detector by the Linear Collider Flavour Identification (LCFI) collaboration. This paper reports test results…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…