Related papers: Universal Properties of Linear Magnetoresistance i…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
The observation of non-saturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent…
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density…
Linear magnetoresistance (LMR) is a widespread phenomenon observed in a host of quantum materials ranging from semiconductor nanostructures to quantum critical and strange metals. While multiple scenarios to explain LMR have been proposed,…
An unsaturated linear magnetoresistance (LMR) has attracted widely attention because of potential applications and fundamental interest. By controlling growth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3…
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear…
The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of order…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…
Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the…
We calculate the effective resistivity of a macroscopically disordered two dimensional conductor consisting of two components in a perpendicular magnetic field. When two components have equal area fractions, we use a duality theorem to show…
A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and…
We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary…
We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…
We have observed a large positive quasi-classical magneto-resistance (MR) in a high mobility 2D electron gas in AlGaAs/GaAs heterostructure. The magneto-resistance is non-saturating and increases with magnetic field as $\rho_{xx}\sim…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
Disorder-induced magnetoresistance has been reported in a range of solid metals and semiconductors, however, the underlying physical mechanism is still under debate because it is difficult to experimentally control. Liquid metals, due to…
Bilinear magnetoresistance is a nonlinear transport phenomenon that scales linearly with the electric and magnetic fields, and appears in nonmagnetic systems with strong spin-orbit coupling, such as topological insulators (TIs). Using the…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…
The longitudinal magnetoresistance (MR) is assumed to be hardly realized as the Lorentz force does not work on electrons when the magnetic field is parallel to the current. However, in some cases, longitudinal MR becomes large, which…
A positive, non-saturating and dominantly linear magnetoresistance is demonstrated to occur in the surface state of a topological insulator having a wavevector-linear energy dispersion together with a finite positive Zeeman energy…