Related papers: Hyperfine interactions in silicon quantum dots
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was…
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever…
We study electron-spin-photon coupling in a single-spin double quantum dot embedded in a superconducting stripline cavity. With an external magnetic field, we show that either a spin-orbit interaction (for InAs) or an inhomogeneous magnetic…
Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…
Two electron spins in quantum dots coupled through coherent tunneling are generally acknowledged to approximately obey Heisenberg isotropic exchange. This has not been established for two holes. Here we measure the spectra of two holes and…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a…
We have performed all-optical measurements of spin relaxation in single self-assembled InAs/GaAs quantum dots (QD) as a function of static external electric and magnetic fields. To study QD spin dynamics we measure the degree of resonant…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy…
Electron spin resonance data of Cu^{2+} ions in La_{14-x}Ca_{x}Cu_{24}O_{41} crystals (x=9,11,12) reveal a very large width of the resonance line in the paramagnetic state. This signals an unusually strong anisotropy of ~10% of the…
Interacting electrons in quantum dots with large Thouless number $g$ in the three classical random matrix symmetry classes are well-understood. When a specific type of spin-orbit coupling known to be dominant in two dimensional…
A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum…
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits…
This paper is written as a brief introduction for beginning graduate students. The picture of electron waves moving in a cristalline potential and interacting weakly with each other and with cristalline vibrations suffices to explain the…
We study the dynamics of an electron spin in a graphene quantum dot, which is interacting with a bath of less than ten nuclear spins via the anisotropic hyperfine interaction. Due to substantial progress in the fabrication of graphene…
We present density functional theory calculations of phosphorus dopants in bulk silicon and of several properties relating to their use as spin qubits for quantum computation. Rather than a mixed pseudopotential or a Heitler-London…
Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunability, and are readily available few-electron systems. To be…
It is shown that the contribution to the induction which at an internal point of a spin density distribution is mathematically described as a local is virtually caused by the summing-up of the fields created by all elements of this…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…