Related papers: Tuning carrier type and density in Bi2Se3 by Ca-do…
Band structure engineering and interfacial buffer layers have been demonstrated as effective means to tune the Fermi level in topological insulators (TI). In particular, the charge compensated compound (BixSb1-x)2Te3 (BST) plays a critical…
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such…
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a…
Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…
This study shows a method of enhancing the thermoelectric properties of GeTe-based materials by Ti and Bi co-doping on cation sites along with self-doping with Ge via simultaneous optimization of electronic (via crystal field engineering,…
We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…
We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96 Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas…
We report a high-pressure study on the heavily electron doped Lix(NH3)yFe2Se2 single crystal by using the cubic anvil cell apparatus. The superconducting transition temperature Tc = 44 K at ambient pressure is first suppressed to below 20 K…
A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers…
The superconductivity recently found in the doped topological insulator Cu_xBi_2Se_3 offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding…
We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\varepsilon$ ranging from -0.96% to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials…
Carrier and phonon dynamics in Bi2Se3 crystals are studied by a spatially resolved ultrafast pump-probe technique. Pronounced oscillations in differential reflection are observed with two distinct frequencies, and are attributed to coherent…
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to…
We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and…
The field and temperature dependencies of the longitudinal and Hall resistivity have been studied for high-quality FeSe${}_{1-x}$S${}_{x}$ (x up to 0.14) single crystals. Quasiclassical analysis of the obtained data indicates a strong…
We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…
Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical…
Topological superconductors have attracted wide-spreading interests for the bright application perspectives to quantum computing. Cu$_{0.3}$Bi$_2$Se$_3$ is a rare bulk topological superconductor with an odd-parity wave function, but the…