Related papers: Fast high fidelity hole spin initialization in a s…
We investigated optical spin orientation and dynamic nuclear polarization (DNP) in individual self-assembled InGaAs/GaAs quantum dots (QDs) doped by a single Mn atom, a magnetic impurity providing a neutral acceptor A$^0$ with an effective…
We investigate experimentally and theoretically the temporal evolution of the spin of the conduction band electron and that of the valence band heavy hole, both confined in the same semiconductor quantum dot. In particular, the coherence of…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the…
We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the…
Direct multi-qubit gates are becoming critical to facilitate quantum computations in near-term devices by reducing the gate counts and circuit depth. Here, we demonstrate that fast and high fidelity three-qubit gates can be realized in a…
In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state…
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…
Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…
A scheme for probabilistic entanglement generation between two distant single electron doped quantum dots, each placed in a high-Q microcavity, by detecting strong coherent light which has interacted dispersively with both subsystems and…
Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such…
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…
We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as…
We propose a method for all-electrical initialization, control and readout of the spin of single ions substituted into a semiconductor. Mn ions in GaAs form a natural example. In the ion's ground state the Mn core spin magnetic moment locks…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
A spin-photon interface based on the luminescence of a singly charged quantum dot in a micropillar cavity allows for the creation of photonic entangled states. Current devices suffer from cavity birefringence, which limits the generation of…
Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…
We report on the micro-photoluminescence spectroscopy of InAs/GaAs quantum dots (QD) doped by a single Mn atom in a magnetic field either longitudinal or perpendicular to the optical axis. In both cases the spectral features of positive…