Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

C. T. Nguyen; A. Balocchi; D. Lagarde; T. T. Zhang; H. Carrère; S. Mazzucato; P. Barate; T. Amand; X. Marie

doi:10.1063/1.4816970

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

Materials Science 2013-09-16 v1 Mesoscale and Nanoscale Physics

Authors: C. T. Nguyen , A. Balocchi , D. Lagarde , T. T. Zhang , H. Carrère , S. Mazzucato , P. Barate , T. Amand , X. Marie

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Abstract

We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spectroscopy that spin dependent recombination (SDR) ratios as high as 240% can be achieved in the implanted areas. The optimum implantation conditions for the most efficient SDR is determined by the systematic analysis of different ion doses spanning four orders of magnitude. The application of a weak external magnetic field leads to a sizeable enhancement of the SDR ratio from the spin polarization of the nuclei surrounding the polarized implanted paramagnetic defects.

Keywords

spin filter ingaas paramagnetic centers focused ion beam spin dependent recombination photoluminescence spectroscopy

Cite

@article{arxiv.1309.3434,
  title  = {Fabrication of an InGaAs spin filter by implantation of paramagnetic centers},
  author = {C. T. Nguyen and A. Balocchi and D. Lagarde and T. T. Zhang and H. Carrère and S. Mazzucato and P. Barate and T. Amand and X. Marie},
  journal= {arXiv preprint arXiv:1309.3434},
  year   = {2013}
}

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

Abstract

Keywords

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