Related papers: Large quantum dots with small oscillator strength
We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy…
We study experimentally time-resolved emission of CdSe quantum dots in an environment with a controlled local density of states (LDOS). The decay rate is measured versus frequency and as a function of distance to a mirror. We observe a…
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…
The radiative and non-radiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements we extract the oscillator strength and the quantum…
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning…
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier…
Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL)…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
Quantum oscillations in magnetization or resistivity are a defining feature of metals subject to an external magnetic field. The phenomenon is generally not expected in insulators without a Fermi surface. The observations of quantum…
We analyze time-resolved spontaneous emission from excitons confined in self-assembled $\mathrm{InAs}$ quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to…
The $k\cdot p$ effective mass approximation (EMA) predicts large, nearly size-independent exciton oscillator strengths in quantum confined semiconductors. Yet, experimental reports have concluded that the total oscillator strength of the…
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs…
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1\mu m < \lambda < 1.3 \mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure…