Related papers: Large quantum dots with small oscillator strength
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement…
We investigated the entanglement in a diluted magnetic semiconductor quantum dot, crucial for quantum technologies. Despite their potential, these systems exhibit low extraction rates. We explore self-assembled InGaAs quantum dots, focusing…
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable…
The emission spectral pattern of a charged exciton in a semiconductor quantum dot is composed of a quadruplet of linearly polarized lines in the presence of a magnetic field oriented perpendicularly to the direction of the photon momentum.…
We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral…
We report calculations of oscillator strengths for the far infrared absorption of light by the excitonic complexes Xn- (the excess charge, n, ranging from one to four) confined in quantum dots. The magnetic field is varied in an interval…
First-order perturbation theory and many-body Green function analysis are used to quantify the influence of size, surface reconstruction and surface treatment on exciton transport between small silicon quantum dots. Competing radiative…
Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots.…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…
One of the most significant research interests in the field of electronics is that on quantum dot, because such materials have electronic properties intermediate between those of bulk semiconductors and those of discrete molecules.…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD…
Free standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrate that when these dots are embedded coherently within…
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…
We consider a `quantum dot' in the Coulomb blockade regime, subject to an arbitrarily large source-drain voltage V. When V is small, quantum dots with odd electron occupation display the Kondo effect, giving rise to enhanced conductance.…
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance.…
The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear…
We study the effect of magnetic field and geometric confinement on excitons confined to a quantum ring. We use analytical matrix elements of the Coulomb interaction and diagonalize numerically the effective-mass Hamiltonian of the problem.…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…