Related papers: Interface roughness, valley-orbit coupling and val…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we…
We study numerically the depinning transition of driven elastic interfaces in a random-periodic medium with localized periodic-correlation peaks in the direction of motion. The analysis of the moving interface geometry reveals the existence…
In this article, we report the influence of the interfacial roughness on the thermal boundary conductance between two crystals, using molecular dynamics. We show evidence of a transition between two regimes, depending on the interfacial…
The dynamics of sharp interfaces separating two non-hydrostatically stressed solids is analyzed using the idea that the rate of mass transport across the interface is proportional to the thermodynamic potential difference across the…
We study pattern formation, fluctuations and scaling induced by a growth-promoting active walker on an otherwise static interface. Active particles on an interface define a simple model for energy consuming proteins embedded in the plasma…
The phenomenon of arrest of an unstably-growing crack due to a curved weak interface is investigated. The weak interface can produce the deviation of the crack path, trapping the crack at the interface, leading to stable crack growth for…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…
We study a system composed of graphene decorated with an array of islands with C_3v symmetry that induce quantum dot (IQD) regions via proximity effects and give rise to several spin-orbit couplings (SOCs). We evaluate transport properties…
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…
We study the high-dimensional properties of an invading front in a disordered medium with random pinning forces. We concentrate on interfaces described by bounded slope models belonging to the quenched KPZ universality class. We find a…
The influence of the external pressure and surface energy on the wetting transition at nanotextured interfaces is studied using molecular dynamics and continuum simulations. The surface roughness of the composite interface is introduced via…
The properties of interfaces are key to understand the physics of matter. However, the study of quantum interface dynamics has remained an outstanding challenge. Here, we use large-scale Tree Tensor Network simulations to identify the…
We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the…
We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…
Atmospheric turbulence makes free-space quantum polarization links intrinsically time varying, whereas receiver-side reduced interfaces are often treated as static. This paper develops a slow-time receiver interface by extending an…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and…