Related papers: Interface roughness, valley-orbit coupling and val…
Motivated by a recently synthesizable class of active interfaces formed by linked self--propelled colloids, we investigate the dynamics and fluctuations of a phoretically (chemically) interacting active interface with roto--translational…
Electron shuttling is emerging as a key enabler of scalable silicon spin-qubit quantum computing, but fidelities are limited by atomistic disorder. We introduce a multiscale simulation framework combining time-dependent finite-element…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
The turbulent/non-turbulent interface is analysed in a direct numerical simulation of a boundary layer in the range $Re_\theta=2800-6600$, with emphasis on the behaviour of the relatively large-scale fractal intermittent region. This…
We investigate theoretically the possibility of a wetting transition induced by geometric roughness of a solid substrate for the case where the flat substrate does not show a wetting layer. Our approach makes use of a novel closed-form…
The roughness of the subduction interface is thought to influence seismogenic behavior in subduction zones, but a detailed understanding of how such roughness affects the state of stress along the subduction megathrust is still debated.…
We study the interface representation of the contact process (CP) at its directed-percolation critical point, where the scaling properties of the interface can be related to those of the original particle model. Interestingly, such a…
We analyze intermittence and roughening of an elastic interface or domain wall pinned in a periodic potential, in the presence of random-bond disorder in (1+1) and (2+1) dimensions. Though the ensemble average behavior is smooth, the…
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…
Roughness of driven elastic interfaces in random media is typically understood to be characterized by a single roughness exponent $\zeta$. We show that at the depinning threshold, due to symmetry breaking caused by the direction of the…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt…
Valley photonic crystals provide efficient designs for the routing of light through channels in extremely compact geometries. The topological origin of the robust transport and the specific geometries under which it can take place have been…
Off-resonance conductance through weakly coupled quantum dots ("valley conductance") is governed by cotunneling processes in which a large number of dot states participate. Virtually the same states participate in the transport at…
An atomic array coupled to a photonic crystal waveguide forms a strongly coupled quantum interface, exhibiting various intriguing collective features of quantum dynamics. Here we consider a homogeneous atomic array and theoretically…
We theoretically investigate transport signatures of quantum interference in highly symmetric double quantum dots in a parallel geometry and demonstrate that extremely weak symmetry-breaking effects can have a dramatic influence on the…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…