Related papers: Silicon photomultiplier timing performance study
The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…
A barrel-shaped plastic scintillation counter with Multi-Pixel Photon Counter (MPPC) readout has been developed and operated in the first WASA-FRS experimental campaign at GSI. The detector was used to measure charged particles emitted from…
Plastic scintillators are widely used in particle detectors when precise timing information is required. As a basis for comparing different detectors we use such a characteristic as the time resolution per 1MeV detected energy, i.e. the…
A statistical model of the nonlinear response of silicon photomultipliers is presented. It includes losses of both the photodetection efficiency and the gain during pixel recovery periods as well as the effect of correlated and uncorrelated…
Silicon-based photosensors (SiPMs) working in the Geiger-mode represent an elegant solution for the readout of particle detectors working at low-light levels like Cherenkov detectors. Especially the insensitivity to magnetic fields makes…
Silicon Photomultipliers (SiPMs) are attractive candidates for light detectors for next generation liquid xenon double-beta decay experiments, like nEXO. In this paper we discuss the requirements that the SiPMs must satisfy in order to be…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…
A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using…
Dark count rate and correlated noise rate are among the main parameters that characterize silicon photomultipliers (SiPM). Typically, these parameters are evaluated by applying approximate formulas, or by fitting specific models, to the…
Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and precise vertex reconstruction are essential. As part of the ALICE…
Future high-energy physics experiments using SiPMs as photosensitive elements may require operation at low temperatures (down to 80 K) to measure single photons with high time resolution in a highly radioactive environment. This calls for a…
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…
Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in…
Silicon photomultipliers (SiPMs) are being considered as potential replacements for conventional photomultiplier tubes (PMTs). However, a significant disadvantage of SiPMs is crosstalk (CT), wherein photons propagate through other pixels,…
Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor…
Silicon Photomultipliers (SiPMs) are an excellent candidate for the development of large-area light sensors. Large SiPM-based detectors require low-noise pre-amplifiers to maximize the signal coupling between the sensor and the readout…
A systematic investigation of Planacon MCP-PMTs was performed using 64 XP85002/FIT-Q photosensors. These devices are equipped with microchannel plates of reduced resistance. Results of a study of their gain stability over time and…
Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…
First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and…
Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…