Related papers: ISIS2: Pixel Sensor with Local Charge Storage for …

3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high…

The ion beam-induced charge (IBIC) analysis of a commercial silicon photodiode configured as a Position Sensitive Detector (PSD) for energetic charged particles is the subject of this report. Although the photodiode is designed for…

International Large Detector (ILD) adopts Particle Flow Algorithm (PFA) for precise measurement of multiple jets. The electromagnetic calorimeter (ECAL) of ILD has two candidates sensor technologies for PFA, which are pixelized silicon…

The Isochronous Mass Spectrometry (IMS) is a powerful tool for mass measurements of exotic nuclei with half-lives as short as several tens of micro-seconds in storage rings. In order to improve the mass resolving power while preserving the…

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…

We discuss two projects exploring the integration of thin CMOS pixel sensors in order to prototype ladders matching the geometry needed for the ILD vertex detector. The PLUME project has designed and fabricated full-size and fully…

The SiD Detector is one of two detector designs for the future International Linear Collider (ILC) that were validated in 2012 SiD features a compact, cost-constrained design for precision Higgs and other measurements, and sensitivity to a…

Some applications in scientific imaging, like space-based high-precision photometry, benefit from a detailed characterization of the sensitivity variation within a pixel. A detailed map of the intra-pixel sensitivity (IPS) allows to…

With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

A novel design for a silicon-tungsten electromagnetic calorimeter is described, based on Monolithic Active Pixel Sensors (MAPS). A test sensor with a pixel size of 50x50 um2 has been fabricated in July 2007. The simulation of the physical…

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

We develop the vertex detector for the international linear collider (ILC) using the FPCCD (Fine Pixel CCD), whose pixel size is 5 x 5 um2. Together with the FPCCD sensor, a prototype of the readout ASIC was developed in 2008. The readout…

Modern silicon tracking detectors based on hybrid or fully integrated CMOS technology are continuing to push to thinner sensors. The ionization energy loss fluctuation in very thin silicon sensors significantly deviates from the Landau…

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase…

Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of the Large Hadron Collider (LHC) has…

To understand the scientific imaging capability, one must characterize the intra-pixel sensitivity variation (IPSV) of the CMOS image sensor. Extracting an IPSV map contributes to an improved detector calibration that allows to eliminate…

Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…

The performance of a double sided silicon strip detector (DSSSD), used for position and energy detection of heavy ions, is reported. The analysis shows that the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD…

A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations,…