Related papers: Novel room temperature Multiferroics for Random Ac…
We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low…
We report observation of surface-defect-induced room temperature multiferroicity - surface ferromagnetism ($M_S$ at 50 kOe $\sim$0.005 emu/g), ferroelectricity ($P_R$ $\sim$2 nC/cm$^2$), and significantly large magnetoelectric coupling…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
The design and fabrication of room-temperature ferrotoroidic materials and magnetic semiconductors are recognized worldwide as a great challenge, and of both theoretical and practical importance in the field of condensed matter physics and…
Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed…
For Sn$_2$P$_2$S$_6$ ferroelectrics the second order phase transitions line is observed until reaching the tricritical point at transition temperature lowering to 250 K by compression. Observed temperature-pressure phase diagram agrees with…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range, which can be turned on and off corresponding to the…
While defects are unavoidable in crystals and often detrimental to material performance, they can be a key ingredient for inducing functionalities when tailored. Here, we demonstrate that an A-site-deficient perovskite Y$_{1/3}$TaO$_3$…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
The coexistence of antiferromagnetic and ferromagnetic order at room temperature in single-phase van der Waals materials, particularly within the two-dimensional limit, has attracted significant research interest. Nonetheless, such…
Magnetoelectric multiferroics are highly sought after for applications in low-power electronics and for advancing fundamental research, including axion insulators and dark matter detection. However, achieving a combination of ferroic spin…
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic…
Interfaces and low dimensionality are sources of strong modifications of electronic, structural, and magnetic properties of materials. FeRh alloys are an excellent example because of the first-order phase transition taking place at…
A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in…
In this paper, magnetoelectric effects of Sr Z-type hexaferrite, Sr3Fe24Co2O41, at room temperature is measured. The change in remanence magnetization was measured by applying a DC voltage or electric field across a slab of hexaferrite.…
BiFeO3 is the most famous multiferroic material, but its G-type antiferromagnetism is highly desirable to be replaced by strong macroscopic magnetism beyond room temperature. Here we obtain double perovskite Bi2FeMoO6 with R3 (#146) space…
Charged domain walls (CDW) in ferroelectrics are emerging as functional interfaces with potential applications in nonvolatile memory, logic, and neuromorphic computing. However, CDWs in conventional ferroelectrics are vertical, buried, or…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
We present a unique example of giant magnetoelectric effect in a conventional multiferroic HoMnO3, where polarization is very large (~56 mC/m2) and the ferroelectric transition temperature is higher than the magnetic ordering temperature by…