Related papers: Intervalley coupling for interface-bound electrons…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
Accurate characterization of charged impurity centers is of importance for the electronic devices and materials. The role of valley-spin degeneracy on the screening of an attractive ion by the mobile carriers is assessed within a range of…
We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two donor…
This paper presents the boundary conditions needed for drift-diffusion models to treat interfaces with spin-orbit coupling. Using these boundary conditions for heavy metal/ferromagnet bilayers, solutions of the drift-diffusion equations…
Recent theory and experiment have revealed that strong spin-orbit coupling can have dramatic qualitative effects on the band structure of weakly interacting solids. Indeed, it leads to a distinct phase of matter, the topological band…
We show that edge states similar to those known for topological insulators exist in two-dimensional electron system with one-band spectrum in the presence of heterogeneous spin-orbit interaction (SOI). These states appear at boundaries…
Ion-ion coupling over long distances represents a highly useful resource for quantum technologies, for example, to sympathetically cool or interconnect qubits in ion-based quantum-computing architectures. In this respect, the recently…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…
Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…
We construct a simple model for electrons in a three-dimensional crystal where a combination of short-range hopping and spin-orbit coupling results in nearly flat bands characterized by a non-trivial Z2 topological index. The flat band is…
We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…
The band offsets between crystalline and hydrogenated amorphous silicon (a-Si:H) are key parameters governing the charge transport in modern silicon hetrojunction solar cells. They are an important input for macroscopic simulators that are…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface…
Infinite-range interactions are known to facilitate the production of highly entangled states with applications in quantum information and metrology. However, many experimental systems have interactions that decay with distance, and the…
The tunability of binding energies is explored by modulating a finite dielectric slab width in a planar, three dielectric system. After verifying the equivalence of the field method and method of images, three different configurations are…
We present a theoretical study of degeneracy breaking due to short-ranged impurities in finite, single-wall, metallic carbon nanotubes. The effective mass model is used to describe the slowly varying spatial envelope wavefunctions of…
We construct a lattice model for a cubic Kondo insulator consisting of one spin-degenerate $d$ and $f$ orbital at each lattice site. The odd-parity hybridization between the two orbitals permits us to obtain various trivial and topological…