Related papers: The importance of intra-molecular electron spin re…
Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on…
The temperature dependence of the electron spin-lattice relaxation SLR was studied in Er0.01Y0.99Ba2Cu3Ox compounds. The data derived from the electron spin resonance ESR and SLR measurements were compared to those from inelastic neutron…
Muon spin spectroscopy and in particular the avoid level crossing (ALC) technique is a sensitive probe of electron spin relaxation (eSR) in organic semiconductors. In complex ALC spectra, eSR can be challenging to extract, as it requires…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
X-band electron paramagnetic resonance (EPR) spectroscopy was used to study the spectral properties of a nitroxide spin probe in ethanol glass and crystalline ethanol, at 5 - 11.5 K. The different anisotropy of molecular packing in the two…
On-chip Electron Spin Resonance (ESR) of magnetic molecules requires the ability to precisely position nanosized samples in antinodes of the electro-magnetic field for maximal magnetic interaction. A method is developed to entrap…
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
Electron spin decoherence caused by elastic spin-phonon processes is investigated comprehensively in a zero-dimensional environment. Specifically, a theoretical treatment is developed for the processes associated with the fluctuations in…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
We present comprehensive electron spin resonance (ESR) studies of in-plane oriented single crystals of $\alpha$-RuCl$_3$, a quasi-two-dimensional material with honeycomb structure, focusing on its high-field spin dynamics. The measurements…
Electron Spin Resonance (ESR) describes a suite of techniques for characterising electronic systems, with applications in physics, materials science, chemistry, and biology. However, the requirement for large electron spin ensembles in…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
We describe a fully broadband approach for electron spin resonance (ESR) experiments where it is possible to not only tune the magnetic field but also the frequency continuously over wide ranges. Here a metallic coplanar transmission line…
A theory of low temperature (T) electron spin resonance (ESR) in half-integer spin antiferromagnetic chains is developed using field theory methods and avoiding previous approximations. It is compared to experiments on Cu benzoate. Power…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…