Related papers: Ex-situ Tunnel Junction Process Technique Characte…
We report on the low temperature tunnel magnetoresistance (MR) in quasi one-dimensional (1D) nanofibers made of conjugated polymers. The MR voltage bias dependence reveals an enhancement (at low biases) and the oscillatory behavior at…
We present a computational study of the adhesive and structural properties of the Al/Al2O3 interfaces as building blocks of the Metal-Insulator-Metal (MIM) tunnel devices, where electron transport is accomplished via tunnelling mechanism…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of…
We study theoretically the spin-dependent transport in ferromagnet/normal-metal/ferromagnet double tunnel junctions by special attention to cotunneling in the Coulomb blockade region. The spin accumulation caused by cotunneling squeezes the…
N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…
We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a side-wall-passivating spacer structure (SWAPS) which is shaped for…
We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within…
We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical…
Electrical contacts between nano-engineered systems are expected to constitute the basic building blocks of future nano-scale electronics. However, the accurate characterization and understanding of electrical contacts at the nano-scale is…
Developing intrinsic homojunctions without chemical heterogeneity remains a key challenge in future two - dimensional devices. Here, we report a geometry - defined metal--semiconductor--metal homojunction in bilayer blue phosphorus (BlueP)…
We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…
Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we…
Inelastic tunneling of electrons can generate the emission of photons with energies intuitively limited by the applied bias voltage. However, experiments indicate that more complex processes involving the interaction of electrons with…
The Simmons model is a well-known and widely used model for the elastic tunneling current of a metallic tunnel junction, and fitting it to electrical measurements can be used to estimate thicknesses and heights of the tunnel barriers. We…
Evidence of a non-thermal magnetic relaxation in the intermediate state of a type-I superconducor is presented. It is attributed to quantum tunneling of interfaces separating normal and superconducting regions. Tunneling barriers are…
Specific heat is a powerful probe offering insights into the entropy and excitation spectrum of the studied material. While it is well established, a key challenge remains the measurements of microcrystals or thin films especially in the…
We consider a tunnel junction formed between a fixed electrode and an oscillating one. Accumulation of the charge on the junction capacitor induces a force on the nano-mechanical oscillator. The junction is voltage biased and connected in…
We study pentanedithiol molecular junctions formed by means of the break-junction technique with a scanning tunneling microscope at low temperatures. Using inelastic electron tunneling spectroscopy and first-principles calculations, the…