Related papers: Ex-situ Tunnel Junction Process Technique Characte…
Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
Two recent experiments [I. P. Radu et al., Science 320, 899 (2008) and X. Lin et al., Phys. Rev. B 85, 165321 (2012)] measured the temperature and voltage dependence of the quasiparticle tunneling through a quantum point contact in the \nu=…
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by…
We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and…
We have studied thermal gradients in thin Cu and AlMn wires, both experimentally and theoretically. In the experiments, the wires were Joule heated non-uniformly at sub-Kelvin temperatures, and the resulting temperature gradients were…
This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to…
We demonstrate both theoretically and experimentally two limiting factors in cooling electrons using biased tunnel junctions to extract heat from a normal metal into a superconductor. Firstly, when the injection rate of electrons exceeds…
Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was…
We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
We study the relationship between the differential conductance and the local density of states in tight-binding tunnel junctions where the junction' geometry can be varied between the point-contact and the planar-contact limits. The…
We have carried out systematic Macroscopic Quantum Tunneling (MQT) experiments on Nb/Al-AlO_x/Nb Josephson junctions (JJs) of different areas. Employing on-chip lumped element inductors, we have decoupled the JJs from their environmental…
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were…
We have studied the Junction Magnetoresistance (JMR) and the Differential junction magnetoresistance (DJMR) for double tunnel junctions with magnetic metals in the Coulomb Blockade regime. Spikes are seen in both the JMR and the DJMR vs.…
We report on the investigation of Al single electron structures equipped with miniature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. From the measurement of the Coulomb blockade in single-junction structures we evaluated…
Motivated by recent tunneling experiments in the parallel wire geometry, we calculate results for momentum resolved tunneling into a short one-dimensional wire, containing a small number of electrons. We derive some general theorems about…
The resistance is computed of an ${\rm NI}_{1}{\rm NI}_{2}{\rm S}$ junction, where N = normal metal, S = superconductor, and ${\rm I}_{i}$ = insulator or tunnel barrier (transmission probability per mode $\Gamma_{i}$). The ballistic case is…
Current noise in nanoscale systems provides additional information beyond the electronic conductance. We report measurements at room temperature of the nonequilibrium "excess" noise in ensembles of atomic-scale gold junctions repeatedly…
High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated…