Related papers: Electroresistance effects in ferroelectric tunnel …
A linear theory of electron transport is developed for a system of two ideal quantum wires, of length L, coupled by tunneling and Coulomb interaction. The interaction of electrons with acoustical phonons is included and the results are…
Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used…
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration.…
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…
We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of…
Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…
The transfer matrix method (TMM) is widely used to analyze the transport properties of one-dimensional or quasi-one-dimensional systems, such as nanostructures and layered materials in spintronics. However, its application in quantifying…
A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are…
Ferroelectric materials are characterized by a spontaneous polar distortion. The behavior of such distortions in the presence of free charge is the key to the physics of metallized ferroelectrics in particular, and of structurally-polar…
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…