Related papers: Fractional quantum Hall effect in CdTe
We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility \mu=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the…
It is demonstrated that all observed fractions at moderate Landau level fillings in the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…
We investigate theoretically the fractional quantum Hall effect at half-filling in the lowest Landau level observed in asymmetric wide quantum wells. The asymmetry can be achieved by a potential bias applied between the two sides of the…
The fractional quantum Hall (FQH) state is a topological state of matter resulting from the many-body effect of interacting electrons and is of vast interest in fundamental physics. The experimental observation of topological surface states…
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the…
Fractional Quantum Hall effect (FQHE) is a unique many-body phenomenon, which was discovered in a two-dimensional electron system placed in a strong perpendicular magnetic field. It is entirely due to the electron-electron interactions…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely…
The energy spectra and wavefunctions of up to 14 interacting quasielectrons (QE's) in the Laughlin nu=1/3 fractional quantum Hall (FQH) state are investigated using exact numerical diagonalization. It is shown that at sufficiently high…
The origin of fractional quantum Hall effect (FQHE) at 4/11 and 5/13 has remained controversial. We make a compelling case that FQHE is possible here for fully spin polarized composite fermions, but with an unconventional underlying…
In the hierarchical theory of the fractional quantum Hall effect, the low--energy behaviour of a daughter state in the next level of the hierarchy is described by an interacting system of quasiparticles of the parent state. Taking the…
We investigate fractional quantum Hall effect at finite temperature using a fermion Chern-Simons field theoretical approach. In the absence of impurity scattering, the essential aspects of fractional quantum Hall effect, such as the…
The nature of fractional quantum Hall (FQH) states is determined by the interplay between the Coulomb interaction and the symmetries of the system. The unique combination of spin, valley, and orbital degeneracies in bilayer graphene is…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that…
In this letter, we discuss the recently proposed fractional quantum Hall effect in the absence of Landau levels. It is shown that the parton construction can explain all properties of 1/3 state, including the effective charge of…
Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
The present theory has investigated the FQHE without any quasi-particle. The electric field due to the Hall voltage is taken into consideration. We find the ground state where the electron configuration is uniquely determined so as to have…