Related papers: First-principles modelling of molecular single-ele…
We present a novel approach for calculating the Coulomb Blockade Phase Diagram (CBPD) in the experimentally accessible strong coupling regime of a single-electron transistor (SET). Our method utilizes the Path Integral Monte Carlo (PIMC)…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of…
We derive the $\sigma$-model for granular metals. It is valid for any relation between the temperature, $T$, and the grain mean level spacing. The continuum limit of the $\sigma$-model describes non-perturbative charging effects in…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining…
We propose a new method for calculating total energies of systems of interacting electrons, which requires little more computational resources than standard density-functional theories. The total energy is calculated within the framework of…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
The Negative Differential Conductivity and Transient Negative Mobility effects in xenon gas are analyzed by a first-principles particle simulation technique and via an approximate solution of the Boltzmann transport equation (BE). The…
One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and…
We consider Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads. Analytic expression for the thermopower as a function of temperature $T$…
The present paper gives an elaborate theoretical description of a new molecular charge transport mechanism applying to a single molecule trapped between two macroscopic electrodes in a solid state device. It is shown by a Hubbard type model…
The Seebeck coefficient plays a fundamental role in identifying the efficiency of a thermoelectric device. Its theoretical evaluation for atomistic models is routinely based on Density Functional Theory calculations combined with the…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
We present results of spin-unrestricted first-principles quantum transport for a gated C$_{60}$ molecule weakly contacted to Al electrodes, making emphasis on the role played by the electronic localization and the spin degree of freedom. As…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
We consider electron systems in quantum dots and imaging of the confined charge density by the Coulomb blockade microscopy (CBM) with the scanning probe technique. We apply an exact diagonalization method to study the reaction of the…
We investigate transient dynamic response of an Anderson impurity quantum dot to a family of ramp-up driving voltage applied to the single coupling lead. Transient current is calculated based on a hierarchical equations of motion formalism…
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…