Related papers: Purely electronic THz polarization in dimer Mott i…
We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…
We investigated microscopic lattice states in the donor-acceptor ionic Mott insulator, TTF-BA, by $^{79}$Br-NQR spectroscopy to explore cross-correlated fluctuations between spin, charge and lattice. A ferroelectric transition with lattice…
Polarization control of THz light is of paramount interest for the numerous applications offered in this frequency range. Recent developments in THz spintronic emitters allow for a very efficient broadband emission, and especially unique is…
Topological insulators in the presence of strong Coulomb interaction constitute novel phases of matter. Transitions between these phases can be driven by single-particle or many-body effects. On the basis of {\it ab-initio} calculations, we…
We investigate electric polarizations emergent perpendicular to an applied thermal gradient in insulating systems. The thermally-induced electric polarization, known as thermopolarization, has been studied conventionally in the case that an…
Electronic band structures usually remain unaffected by doping via a chemical-potential shift or by increasing the temperature in conventional band insulators. In contrast, it has been shown that those of Mott and Kondo insulators can be…
Searching for topological insulators in solids is one of the main issues of modern condensed matter physics since robust gapless edge or surface states of the topological insulators can be used as building blocks of next-generation devices.…
The quasi one-dimensional organic conductor (TMTTF)2AsF6 shows the charge ordering transition at Tc101K to a state of the ferroelectric Mott insulator which is still well conducting. We present and interpret the experimental data on the…
Topological insulators subject to a time-symmetry-breaking perturbation are predicted to display a magneto-electric effect that causes the electric and magnetic induction fields to mix at the material's surface. This effect induces…
Topological insulators are characterized by the presence of gapless surface modes protected by time-reversal symmetry. In three space dimensions the magnetoelectric response is described in terms of a bulk theta term for the electromagnetic…
We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-to-insulator transition in various of the title quasi-two-dimensional organic charge-transfer salts by means of fluctuation (noise) spectroscopy.…
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation)…
The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…
Topological insulators (TIs) are an unusual phase of quantum matter with nontrivial spin-momentum locked topological surface states (TSS). The electrical detection of spin-momentum locking of the TSS in 3D TIs has been lacking till very…
We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…
The phase transition driven by electron correlations in a Chern insulator is investigated within the dynamical mean-field theory. The Chern insulator is described by the Haldane model and the electron correlations are incorporated by…
Moir\'e transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moir\'e superlattice, and it is…
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…
Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moir\'e bands that are approximately described by triangular lattice generalized Hubbard models [PhysRevLett.121.026402]. In this article we…