Related papers: Lateral Spin Injection in Germanium Nanowires
Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias…
Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent…
The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle…
A domain wall (DW) which moves parallel to a magnetically compensated interface between an antiferromagnetic insulator (AFMI) and a two-dimensional (2D) metal can pump spin polarization into the metal. It is assumed that localized spins of…
Spin waves are investigated in Yttrium Iron Garnet (YIG) waveguides with a thickness of 39 nm and widths ranging down to 50 nm, i.e., with aspect ratios thickness over width approaching unity, using Brillouin Light Scattering spectroscopy.…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
We have studied the evolution of the Spin Hall Effect in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions…
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…
The injection, propagation and detection of spin currents are essential physical processes in spintronics. So far, the separation of charge and spin currents was facilitated by the electrical spin injection from a ferromagnet (FM) or the…
We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
We study electronic transport in graphene/ferromagnetic insulator hybrid devices. The system comprises an armchair graphene nanoribbon with a lens-shaped EuO ferromagnetic insulator layer deposited on top of it. When the device supports a…
We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This…
We study spin polarized transport in silicon germanium nanowires using a semiclassical monte carlo approach. Spin depolarization in the channel is caused due to D'yakonov-Perel (DP) relaxation associated with Rashba spin orbit coupling and…