Related papers: Typical-Medium Theory of Mott-Anderson Localizatio…
Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an…
The superfluid-Mott insulator transition of spin-2 boson atoms with repulsive interaction in an optical lattice in a magnetic field is presented. By using the mean field theory, Mott ground states and phase diagrams of superfluid-Mott…
We present a new quantum molecular dynamics (MD) method where the electronic structure and atomic forces are solved by a real-space dynamical mean-field theory (DMFT). Contrary to most quantum MD methods that are based on effective…
We investigate the Mott-Anderson physics in interacting disordered one-dimensional chains through the average single-site entanglement quantified by the linear entropy, which is obtained via density-functional theory calculations. We show…
Anderson localization is a universal phenomenon affecting non-interacting quantum particles in disorder. In three spatial dimensions it becomes particularly interesting to study because of the presence of a quantum phase transition from…
Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3,…
We investigate the behavior of the thermoelectric power [S] in disordered systems close to the Anderson-type metal-insulator transition [MIT] at low temperatures. In the literature, we find contradictory results for S. It is either argued…
Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
Magnetization curve and changes of the single-particle excitation spectra by magnetic field are calculated for the periodic Anderson model at half-filling in infinite spatial dimension by using the exact diagonalization method. It is found…
The ground state of the Hubbard model is studied within the single-site approximation (SSA) and beyond the SSA. Within the SSA, the ground state is a typical Mott insulator at the critical point n=1 and U/W=+infty, with n being the electron…
We carefully revisit the electron-boson scattering problem, going beyond popular semi-classical treatments. By providing numerically exact results valid at finite temperatures, we demonstrate the existence of a regime of electron-boson…
We consider a model for a metal-insulator transition of correlated electrons in an external magnetic field. We find a broad region in interaction and magnetic field where metallic and insulating (fully magnetized) solutions coexist and the…
Identifying the fingerprints of the Mott-Hubbard metal-insulator transition may be quite elusive in correlated metallic systems if the analysis is limited to the single particle level. However, our dynamical mean-field calculations…
We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…
The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and…
We study metal-insulator transitions between Mott insulators and metals. The transition mechanism completely different from the original dynamical mean field theory (DMFT) emerges from a cluster extension of it. A consistent picture…
A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…
Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…
The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…