Related papers: Strain-induced pseudo-magnetic field for novel gra…
Strain can tailor the band structures and properties of graphene nanoribbons (GNRs) with the well-known emergent pseudo-magnetic fields and the corresponding pseudo-Landau levels (pLLs). We design one type of the zigzag GNR (ZGNR) with…
Strain-inducing deformations in graphene alter charge distributions and provide a new method to design specific features in the band structure and transport properties. Novel approaches implement engineered substrates to induce specifically…
We examine strain-induced quantized Landau levels in graphene. Specifically, arc-bend strains are found to cause nonuniform pseudomagnetic fields. Using an effective Dirac model which describes the low-energy physics around the nodal…
The long-wavelength physics of monolayer graphene in the presence of periodic strain fields has a natural chiral scattering network description. When the strain field varies slowly compared to the graphene lattice and the effective magnetic…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect…
The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…
We consider the scattering of Dirac particles in graphene due to the superposition of an external magnetic field and mechanical strain. As a model for a graphene nanobubble, we find exact analytical solutions for single-particle states…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone,…
Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the…
We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account…
Very recently, the standard description of electrons in strained graphene has been completed by the explicit inclusion of the lattice deformation. Here, the effect of these lattice corrections is taken into account to find the mechanical…
Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…
Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial…
The mechanical and electronic properties of a graphene membrane placed on top of a superlattice of nanopillars are investigated. We use molecular dynamics (MD) simulations to access the deformation fields and the tight-binding approaches to…
The extremely high pseudo-magnetic field emerging in strained graphene suggests that an oscillating nano-deformation will induce a very high current even without electric bias. In this paper, we demonstrate the sub-terahertz (THz) dynamics…
We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
The low-energy physics of graphene is described by relativistic Dirac fermions with spin and valley degrees of freedom. Mechanical strain can be used to create a pseudo magnetic field pointing to opposite directions in the two valleys. We…