Related papers: Graphene-based spin-pumping transistor
The unusual electronic properties of single-layer graphene make it a promising material system for fundamental advances in physics, and an attractive platform for new device technologies. Graphene's spin transport properties are expected to…
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
We theoretically analyse the dynamics of a suspended graphene membrane which is in tunnel contact with grounded metallic electrodes and subjected to ac-electrostatic potential induced by a gate electrode. It is shown that for such system…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…
Inducing magnetism in graphene holds great promises, such as controlling the exchange interaction with a gate electrode and generating exotic magnetic phases. Coating graphene with magnetic molecules or atoms has so far mostly lead to…
A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…
High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is…
An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator circuits with and without graphene lateral heat spreaders. Numerical…
In spintronics, the ability to transport magnetic information often depends on the existence of a spin current traveling between two different magnetic objects acting as source and probe. A large fraction of this information never reaches…
Graphene is an attractive material for communications in the THz range due to its ability to support surface plasmon polaritons. This enables a graphene antenna to be smaller in size than its metallic counterpart. In addition, the…