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Related papers: Mechanisms of doping graphene

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Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to…

The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied…

Materials Science · Physics 2022-04-05 Nzar Rauf Abdullah , Botan Jawdat Abdullah , Vidar Gudmundsson

We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction…

Materials Science · Physics 2009-10-07 Xiaolin Li , Hailiang Wang , Joshua T. Robinson , Hernan Sanchez , Georgi Diankov , Hongjie Dai

Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times…

Materials Science · Physics 2017-12-20 Takeshi Inoshita , Masaru Tsukada , Susumu Saito , Hideo Hosono

It was recently shown that nitrogen-doped graphene (NG) can exhibit both p- and n-type characters depending on the C-N bonding nature, which represents a significant bottleneck for the development of graphene-based electronics. Based on…

Mesoscale and Nanoscale Physics · Physics 2015-03-10 Hyo Seok Kim , Han Seul Kim , Seong Sik Kim , Yong-Hoon Kim

We examine the robustness of the S-shaped current-voltage characteristics associated with hot-carrier-induced electrical breakdown in perforated graphene metasurfaces (PGMs) as a function of doping. The perforation of the graphene layer…

Mesoscale and Nanoscale Physics · Physics 2025-11-17 M. Ryzhii , V. Ryzhii , C. Tang , T. Otsuji , M. S. Shur

We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomena is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 Z. L. Miskovic , N. Upadhyaya

We theoretically predict that the motion of a polar crystalline layer between two graphene planes exerts Coulomb drag on electrons in graphene, inducing a DC drag current. The physical mechanism underlying this drag arises from intervalley…

Mesoscale and Nanoscale Physics · Physics 2025-01-03 A. L. Chudnovskiy

The effect of chemical doping of graphene films on the photovoltaic properties of the graphene/silicon Schottky junction solar cells was investigated. Thionyl chloride modification greatly enhanced the conductivity of graphene film,…

Materials Science · Physics 2011-01-04 Xinming Li , Hongwei Zhu , Kunlin Wang , Jinquan Wei , Guifeng Fan , Xiao Li , Dehai Wu

In this paper, the effect of B and N doping on the phonon induced thermal conductivity of graphene has been investigated. This study is important when one has to evaluate the usefulness of electronic properties of B and N doped graphene. We…

Nitrogen-doped graphene was recently synthesized and was reported to be a catalyst for hydrogen dissociative adsorption under a perpendicular applied electric field (F). In this work, the diffusion of H atoms on N-doped graphene, in the…

Materials Science · Physics 2012-02-15 Z. M. Ao , A. D. Hernández-Nieves , F. M. Peeters , S. Li

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…

Superconductivity · Physics 2013-07-17 E. R. Ylvisaker , W. E. Pickett

We present a theoretical description of the electronic properties of graphene in the presence of disorder, electron-electron interactions, and particle-hole symmetry breaking. We show that while particle-hole asymmetry, long-range Coulomb…

Strongly Correlated Electrons · Physics 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

Atomic-level structural changes in materials are important but challenging to study. Here, we demonstrate the dynamics and the possibility of manipulating a phosphorus dopant atom in graphene using scanning transmission electron microscopy…

Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and…

Materials Science · Physics 2012-09-04 Ji Eun Lee , Gwanghyun Ahn , Jihye Shim , Young Sik Lee , Sunmin Ryu

We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in…

Materials Science · Physics 2015-06-19 Wenmei Ming , Feng Liu

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…

Materials Science · Physics 2025-01-08 Imtiaz Noor Bhatti , J. Avila , Z. Chen , A. Baron , Y. Zhang , A. Shukla , P. Dudin

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped…

Mesoscale and Nanoscale Physics · Physics 2014-02-25 T. P. Kaloni , R. P. Joshi , N. P. Adhikari , U. Schwingenschlögl

Controlling the charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties in natural materials. This approach could be used to induce topological transitions in the optical…

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but…