Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers.
@article{arxiv.1402.0122,
title = {Band gap tunning in BN-doped graphene systems with high carrier mobility},
author = {T. P. Kaloni and R. P. Joshi and N. P. Adhikari and U. Schwingenschlögl},
journal= {arXiv preprint arXiv:1402.0122},
year = {2014}
}