Related papers: Sources of negative differential resistance in ele…
A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule…
A negative differential resistance (NDR) in a one-dimensional band insulator attached to electrodes is investigated. We systematically examine the effects of an electrode bandwidth and a potential distribution inside the insulator on…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
Motivated by recent experiments, we have studied transport behavior of coupled quantum dot systems in the Coulomb blockade regime using the master (rate) equation approach. We explore how electron-electron interactions in a donor-acceptor…
Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from…
A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently…
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…
Using self-consistent calculations based on Non-Equilibrium Green's Function (NEGF) formalism, the origin of negative differential resistance (NDR) in molecular junctions and quantum wires is investigated. Coupling of the molecule to…
We have carried out calculations of electron transport through a metal-molecule-metal junction with metal nanoclusters taking the part of electrodes. We show that negative differential resistance peaks could appear in the current-voltage…
The electronic nonlinear transport through ultra narrow graphene nanoribbons (sub-$10nm$) is studied. A stable region of negative differential resistance (NDR) appears in the I-V characteristic curve of {\it odd} zigzag graphene nanoribbons…
Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…
Reaction currents in chemical networks usually increase when increasing their driving affinities. But far from equilibrium the opposite can also happen. We find that such negative differential response (NDR) occurs in reaction schemes of…
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in…
We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…
We investigate the transport properties of pristine zigzag-edged borophene nanoribbons (ZBNRs) of different widths, using the fist-principles calculations. We choose ZBNRs with widths of 5 and 6 as odd and even widths. The differences of…
In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler…
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our…
Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array;…