Related papers: Quantum dot spin qubits in Silicon: Multivalley ph…
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle…
Quantum information transfer is fundamental for scalable quantum computing in any potential platform and architecture. Hole spin qubits, owing to their intrinsic spin-orbit interaction (SOI), promise fast quantum operations which are…
We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the…
Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…
The spin-valley or Kramers qubit promises significantly enhanced spin-valley lifetimes due to strong coupling of the electrons' spin to their momentum (valley) degrees of freedom. In transition metal dichalcogenides (TMDCs) such spin-valley…
We describe a method for implementing deterministic quantum gates between two spin qubits separated by centimeters. Qubits defined by the singlet and triplet states of two exchange coupled quantum dots have recently been shown to possess…
We review our investigation of the spin dynamics for two electrons confined to a double quantum dot under the influence of the hyperfine interaction between the electron spins and the surrounding nuclei. Further we propose a scheme to…
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…
The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
Spin qubits defined in carbon nanotube quantum dots are of considerable interest for encoding and manipulating quantum information because of the long electron spin coherence times expected. However, before carbon nanotubes can find…
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB),…
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to…
Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…