Related papers: Quantum dot spin qubits in Silicon: Multivalley ph…
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si…
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…
We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate…
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…
The pseudospin of heavy-holes (HHs) confined in a semiconductor quantum dot (QD) represents a promising candidate for a fast and robust qubit. While hole spin manipulation by a classical electric field utilizing the Dresselhaus spin-orbit…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
Tunable synthetic spin-orbit coupling (s-SOC) is one of the key challenges in various quantum systems, such as ultracold atomic gases, topological superconductors, and semiconductor quantum dots. Here we experimentally demonstrate…
Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the…
We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while…
We study spectral and transport properties of interacting quantum dots with spin. Two particular model systems are investigated: Lateral multilevel and two parallel quantum dots. In both cases different paths through the system can give…
We study electron-spin-photon coupling in a single-spin double quantum dot embedded in a superconducting stripline cavity. With an external magnetic field, we show that either a spin-orbit interaction (for InAs) or an inhomogeneous magnetic…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
We propose how to form spin qubits in graphene. A crucial requirement to achieve this goal is to find quantum dot states where the usual valley degeneracy in bulk graphene is lifted. We show that this problem can be avoided in quantum dots…
Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…
We propose a scheme for implementing quantum gates and entanglement between spin qubits in the outer dots of a triple-dot system with an empty central dot. The voltage applied to the central dot can be tuned to realize the gate. Our scheme…