Related papers: Catalyst preparation for CMOS-compatible silicon n…
Carbon Nanotubes have shown to be an attractive option in the race to find a replacement to silicon-based transistors, due to its high electrical conductivity, extraordinary mechanical strength, and thermal conductivity. However, challenges…
The discovery of high-temperature superconductivity above 240 K in binary La-H and Y-H systems inspired further predictions of even higher transition temperatures in compounds such as YH10 and MgH6, which are likely to be dynamically…
Metallic nanoparticles have been used as catalysts for various reactions, and the huge literature on the subject is hard to overlook. In many applications, the nanoparticles must be affixed to a colloidal carrier for easy handling during…
Using first-principles calculations, we investigate the melting temperatures $T_{\rm m}$ and formation free energy of carbon compounds with sodalite structures, $X$C$ _6$, $X$C$ _{10}$, and $X$C$ _{12}$, where $X$ is F, Na, Cl, and so on.…
We report an experimental study of the CoFe2O4/CoFe2 nanocomposite, a nanostructured material formed by hard (CoFe2O4) and soft (CoFe2) magnetic materials. The precursor material, cobalt ferrite (CoFe2O4), was prepared using the…
A recent proposal that the metamaterial approach to dielectric response engineering may increase the critical temperature of a composite superconductor-dielectric metamaterial has been tested in experiments with compressed mixtures of tin…
This work experimentally studies silicon-cored tungsten nanowire selective metamaterial absorber to enhance solar-thermal energy harvesting, simply fabricated by conformally coating a thin tungsten layer onto a commercial silicon nanowire…
In analog neuromorphic chips, designers can embed computing primitives in the intrinsic physical properties of devices and circuits, heavily reducing device count and energy consumption, and enabling high parallelism, because all devices…
Growth of carbon nanotubes (CNTs) was performed by atmospheric pressure chemical vapour deposition (APCVD) of propane on Si(111) with a pre-treated Ni overlayer acting as a catalyst. Prior to the growth of CNTs, a thin film of Ni was…
Plastic scintillators that can discriminate between gamma rays, fast neutrons, and thermal neutrons were synthesized and characterized while considering the balance between processing and performance at the kilogram scale. These trade-offs…
Polydimethylsiloxane (PDMS) is a widely used organosilicon polymer often employed in formulations with fine oxide particles for various high temperature applications. Although PDMS is considered to be thermally stable and chemically inert,…
We report a systematic comparison of niobium nitride thin films deposited on oxidized silicon substrates by reactive DC magnetron sputtering and reactive high-power impulse magnetron sputtering (HiPIMS). After determining the nitrogen gas…
Rapid and reproducible assembly of aligned nanostructures on a wafer-scale is a crucial, yet one of the most challenging tasks in the incorporation of nanowires into integrated circuits. We present the synthesis of a periodic nanochannel…
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups.…
Metal nitrides represent a large class of materials with extensive applications in optoelectronics, energy, and healthcare technologies. For example, GaN and related nitride semiconductors are key materials for solid-state lighting and…
Silicon nanowires have attracted considerable interest due to their wide-ranging applications in nanoelectromechanical systems and nanoelectronics. Molecular dynamics simulations are powerful tools for studying the mechanical properties of…
Room temperature ferromagnetism has been one of the most sought after topics in today's emerging field of spintronics. It is strongly believed that defect- and inhomogeneity- free sample growth should be the optimal route for achieving…
V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the…
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD…
Superconductivity with zero resistance transition temperature (Tc) up to 8.4 K and 8.3 K can be obtained by doping cobalt and sodium in alfa-FeSe with the nominal composition of Fe0.92Co0.08Se and Na0.1FeSe, respectively. The electrical…