Related papers: Solid-state memcapacitive system with negative and…
Here it is proposed a three-dimensional plasmonic nonvolatile memory crossbar arrays that can ensure a dual-mode operation in electrical and optical domains. This can be realized through plasmonics that serves as a bridge between photonics…
We propose a protection scheme of a superconducting microwave resonator to realize a hybrid quantum system, where cold neutral atoms are coupled with a single microwave photon through magnetic dipole interaction at an interface inductor.…
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively…
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS…
Understanding the system-level spectral immittance response of capacitive energy storage devices with analytically tractable physics-based models is not only important for the progress of the technology, but also allows to develop new…
Using molecular dynamics simulations, we show that, when subject to a periodic external electric field, a nanopore in ionic solution acts as a capacitor with memory (memcapacitor) at various frequencies and strengths of the electric field.…
It is rigorously proved that ideal memcapacitors and meminductors are not passive or lossless devices, nor are they satisfying the weaker notion of cyclo-passivity, which arises when dropping the requirement of non-negativity of the storage…
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including…
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…
The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as…
We introduce a mechanism that can both hold and amplify electromagnetic waves by rapidly changing the permittivity of the medium during the wave travel from a positive to a dispersionless (i.e. non-Foster) negative value and then back…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
The ability to manipulate polar entities with multiple external fields opens exciting possibilities for emerging functionalities and novel applications in spin systems, photonics, metamaterials, and soft matter. Liquid crystals (LCs),…
Cavity assisted quantum memory storage has been proposed [PRA 82, 022310 (2010), PRA 82, 022311 (2010)] for creating efficient (close to unity) quantum memories using weakly absorbing materials. Using this approach we experimentally…
We suggest circuit realizations of emulators transforming memristive devices into effective floating memcapacitive and meminductive systems. The emulator's circuits are based on second generation current conveyors and involve either four…
A liquid crystal optical device made of an optically anisotropic heterostructure is considered. The device consists of a cholesteric liquid crystal (CLC) layer sandwiched by two phase-shifting anisotropic layers of a nematic liquid crystal…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…