Related papers: Nanoscale rectification at the LaAlO3/SrTiO3 inter…
The resistance of the electron gas at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area…
Atomically sharp 2D in-plane heterostructures with nanoscale interfaces provide a powerful platform for tailoring optical and electrical properties at the nanoscale, enabling novel device engineering and the exploration of new physical…
The progress in the fabrication of nanoscale systems based on the two-dimensional electron gas at the interface between LaAlO$_3$ and SrTiO$_3$ (LAO/STO) has created an increased demand for simulations of these nanostructures, which…
We investigated the electronic structure of the SrTiO$_3$/LaAlO$_3$ superlattice (SL) by resonant soft x-ray scattering. The (003) peak, which is forbidden for our "ideal" SL structure, was observed at all photon energies, indicating…
Realizing a controllable network with multiple degrees of interaction is a challenge to physics and engineering. Here, we experimentally report an on-chip reconfigurable network based on nanoelectromechanical resonators with…
In this paper, we report on the impact of metal/polymer interfaces on the rectifying behavior of novel multi-segmented hybrid nanowires (HNWs) made of metallic and conjugated polymer (CP) segments. Using HNWs integrated in micromachined…
Using first-principles electronic structure calculations, we studied the electronic and thermoelectric properties of SrTiO3 based oxide materials and their nanostructures identifying those nanostructures which possess highly anisotropic…
Active nanowires and nanofibers can be realized by the electric-field induced stretching of polymer solutions with sufficient molecular entanglements. The resulting nanomaterials are attracting an increasing attention in view of their…
A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON-current variations to size variations of [110] oriented…
Lateral two-dimensional (2D) tunnel diodes that reproduce metal-insulator-metal (MIM)-diode-like rectification without using dissimilar contacts are attractive for scalable nanoelectronics. MoS$_2$ can exist in both the semiconducting 1H…
Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si (001) surfaces. As shown by variable temperature scanning tunneling microscopy, this leads to new types of one dimensional nanostructures that…
The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which…
We report on first principles calculations of the electronic structure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$/SrTiO$_{3}$ junction with two possible types of interface terminations. We find that the La$_{0.7}$Sr$_{0.3}$O/TiO$_{2}$ interface…
Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO$_3$/$\textit{n}$-SrTiO$_3$ system. We demonstrate via high energy resolution…
The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…
Confined electron systems, such as 2D electron gases (2DEGs), 2D materials, or topological insulators show great technological promise but their susceptibility to defects often results in nanoscale inhomogeneities with unclear origins.…
With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly…
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such…
Hybrid semiconducting nanowire devices combining epitaxial superconductor and ferromagnetic insulator layers have been recently explored experimentally as an alternative platform for topological superconductivity at zero applied magnetic…
A set of broken symmetry two-dimensional ground states are predicted in (111)-oriented (LaNiO$_3$)$_N$/(LaAlO$_3$)$_M$ ($N$/$M$) superlattices, based on density functional theory (DFT) calculations including a Hubbard $U$ term. An…