Related papers: Quantum tunneling through planar p-n junctions in …
Electrical transport in three dimensional topological insulators(TIs) occurs through spin-momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into…
A semiclassical theory is developed and compared to experiments on the tunneling resonance spectrum for a quantum well in magnetic field tilted with respect to the tunneling direction. As the tilt angle is increased from zero the classical…
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba…
HgTe/HgCdTe quantum wells with the inverted band structure have been probed using far infrared magneto-spectroscopy. Realistic calculations of Landau level diagrams have been performed to identify the observed transitions. Investigations…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…
We show that electrons in ordinary III-V semiconductor double wells with an in-plane modulating periodic potential and inter well spin-orbit interaction are tunable Topological Insulators (TIs). Here the essential TI ingredients, namely,…
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case…
In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…
Symmetry offers a useful approach to unfold the intertwined degrees of freedom. Thus it paves the way to resolve coexisting quantum orders into distinct symmetry sectors. Motivated by the recent observation of superconductivity in…
A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. The photocurrent excitation spectrum is…
We propose a semiconductor structure that can rotate the electron spin without using ferromagnetic contacts, tunneling barriers, external radiation etc. The structure consists of a strongly curved one-dimensional ballistic wire with…
We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
We report on the quantum interference and spin accumulation on double quantum dots with Rashba spin-orbit coupling and electron-electron interaction, based on the Keldysh nonequilibrium Green function formalism. It is shown that Rashba…
We calculate the quantum correction to the classical conductance of a disordered mesoscopic normal-superconducting (NS) junction in which the electron spatial and spin degrees of freedom are coupled by an appreciable spin orbit interaction.…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…
The electronic transport of graphene p-n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…