Related papers: The problem of "macroscopic charge quantization" i…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
Based on the Ambegaokar-Eckern-Schon approach to the Coulomb blockade we develop a complete quantum theory of the single electron transistor. We identify a previously unrecognized physical observable q^\prime in the problem that, unlike the…
We study a tunnel contact that acts as charge detector for a single-electron transistor (SET) focusing on correlations between the detector current and the current through the SET. This system can be described fully by a Markovian master…
By using the Schwinger-Keldysh approach, we evaluate the current noise and the charge noise of the single-electron transistor (SET) in the regime of large charge fluctuations caused by large tunneling conductance. Our result interpolates…
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…
Both experiments and theoretical studies have demonstrated that the interaction between the current carrying electrons and the induced polarization charge in single-molecule junctions leads to a strong renormalization of molecular charging…
We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
In this letter the phenomenon of macroscopic quantization is investigated using the particle on the ring interacting with the dissipative environment as an example. It is shown that the phenomenon of macroscopic quantization has the clear…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…
The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the…