Related papers: Uniaxial strain on gapped graphene
We study the physics of the strong-coupling Hubbard model in a kagome lattice ribbon under mechanical tension and half-filling. It is known that in the absence of strain, the lattice symmetry of the system and strong electronic interactions…
We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations:…
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…
We study the Haldane model under strain using a tight-binding approach, and compare the obtained results with the continuum-limit approximation. As in graphene, nonuniform strain leads to a time-reversal preserving pseudo-magnetic field…
The deposition of a two-dimensional material on the surface of a three-dimensional crystal can generate superlattices with electronic properties modified through the proximity spin-orbit effect. In this study, we found that Kekul\'e…
First principles calculations were performed to study strain effects on band gap of armchair graphene nanoribbons (AGNRs)with different edge passivation, including H, O, and OH group. The band gap of the H-passivated AGNRs shows a nearly…
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…
We show that, if graphene is subjected to the potential from an external superlattice, a band gap develops at the Dirac point provided the superlattice potential has broken inversion symmetry. As a numerical example, we calculate the band…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
The strain engineering technique allows us to alter the electronic properties of graphene in various ways. Within the continuum approximation, the influences of strain result in the appearance of a pseudo-gauge field and modulated Fermi…
Twist bilayer graphenes with magical angle have nearly flat band, which become strongly correlated electron systems. Herein, we propose another system based on strained bilayer graphene that have flat band at the intrinsic Fermi level. The…
By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. With a chosen transport direction (Ox-axis), we define two classes of…
We investigate the strain effect on the Goos-H\"anchen (GH) shifts and group delay time for transmitted Dirac fermions in gapped graphene through a single barrier potential. The solutions of energy spectrum are used to compute the…
Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…
We propose a tunable electronic band gap and zero-energy modes in periodic heterosubstrate-induced graphene superlattices. Interestingly, there is an approximate linear relation between the band gap and the proportion of inhomogeneous…
The mechanical response of single and multiple graphene sheets under uniaxial compressive loads was studied with molecular dynamics simulations, using different semi-empirical force fields at different boundary conditions or constrains.…
We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how…
We examine strain-induced quantized Landau levels in graphene. Specifically, arc-bend strains are found to cause nonuniform pseudomagnetic fields. Using an effective Dirac model which describes the low-energy physics around the nodal…
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…
In this work we study theoretically the electronic properties of a sheet of graphene grown on a periodic heterostructure substrate. We write an effective Dirac equation, which includes a dependence of both the band gap and the Fermi…