Related papers: Hall effect in superconducting Fe(Se0.5Te0.5) thin…
Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…
The negative Hall constant R_H measured all over the phase diagram of Ba(Fe(1-x)Cox)2As2 allows us to show that electron carriers always dominate the transport properties. The evolution of R_H with x at low doping (x<2%) indicates that…
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $\rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…
We study the influence of the thickness Df of the plain ferromagnetic (F) film on the electrical resistance of the flux-coupled hybrids, consisting of superconducting (S) Al film and multilayer [Co/Pt] F film with out-of-plain…
We measured the complex conductivity, $\sigma$, of FeSe$_{1-x}$Te$_x$ ($x=0-0.5$) films in the superconducting state which show a drastic increase of the superconducting transition temperature, $T_\textrm{c}$, when the nematic order…
The field-reentrant (field-reinforced) superconductivity on ferromagnetic superconductors is one of the most interesting topics in unconventional superconductivity. The enhancement of effective mass and the induced ferromagnetic…
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…
Measurements of the Hall effect and the resistivity in twinned YBa2Cu3O7-delta thin films in magnetic fields B oriented parallel to the crystallographic c-axis and to the twin boundaries reveal a double sign reversal of the Hall coefficient…
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…
We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…
Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor…
Granular metals offer tailorable electronic properties and play crucial roles in device and sensor applications. We have fabricated a series of nonmagnetic granular CoSi2 thin films and studied the Hall effect and transport properties. We…
FeSe0.5Te0.5 thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 or FeSe0.5Te0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate…
The local structure of superconducting single crystals of K0.8Fe1.6+xSe2 with Tc = 32.6 K was studied by x-ray absorption spectroscopy. Near-edge spectra reveal that the average valence of Fe is 2+. The room temperature structure about the…
The superfluid density, \rho_s, of the iron chalcogenide superconductor, FeSe_1-x, was studied as a function of pressure by means of muon-spin rotation. The zero-temperature value of \rho_s increases with increasing transition temperature…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
The crystal structure and numerous normal and superconducting state properties of layered tetragonal (P4/nmm) LaFeAsO, with F-doping of 11 %, are reported. Resistivity measurements give an onset transition temperature Tc = 28.2 K, and low…
Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered…